參數(shù)資料
型號(hào): T436432B-5SG
廠商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200萬(wàn)× 32內(nèi)存為512k × 32 x 4Banks同步DRAM
文件頁(yè)數(shù): 54/72頁(yè)
文件大?。?/td> 731K
代理商: T436432B-5SG
TE
CH
tm
T436432B
TM Technology Inc. reserves the right
P. 54
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 16.2. Auto Precharge after Read Burst (Burst Length=4, CAS# Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
BS0,1
t
CK2
Activate
Command
Bank A
Activate
Command
Bank A
Bx0
Bx1 Bx2
Bx3
Ay1
Ay2
Hi-Z
Read
Command
Bank A
RAx
RAx
RBx
Ax0
Ax1
Ax2
Ax3
Ay0
Ay3
By0
Activate
Command
Bank B
Activate
Command
Bank B
RBx
CBx
RBy
RAy
CBy
By1
By2
By3
High
Az0
Az1
Az2
Read with
Auto Precharge
Command
Bank B
Read with
Auto Precharge
Command
Bank A
Read with
Auto Precharge
Command
Bank B
Read with
Auto Precharge
Command
Bank A
CAx
RBy
RAz
CAz
RAz
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