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參數(shù)資料
| 型號： | T835-XXXH |
| 廠商： | 意法半導體 |
| 英文描述： | 8A TRIACS |
| 中文描述： | 8A條雙向可控硅 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 133K |
| 代理商： | T835-XXXH |
BTA08, BTB08 and T8 Series
3/11
■
Standard (4 quadrants)
Table 5: Static Characteristics
Table 6: Thermal resistance
Symbol
Test Conditions
Quadrant
BTA08 / BTB08
Unit
C
B
I
GT
(1)
V
D
= 12 V R
L
= 30
I - II - III
IV
MAX.
25
50
50
100
mA
V
GT
ALL
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
T
j
= 125°C
ALL
MIN.
0.2
V
I
H
(2)
I
T
= 500 mA
MAX.
25
50
mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
40
50
mA
II
80
100
dV/dt (2)
V
D
= 67 %V
DRM
gate open T
j
= 125°C
MIN.
200
400
V/μs
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms T
j
= 125°C
MIN.
5
10
V/μs
Symbol
Test Conditions
Value
Unit
V
T
(2)
I
TM
= 11 A t
p
= 380 μs
T
j
= 25°C
MAX.
1.55
V
V
to
(2)
Threshold voltage
T
j
= 125°C
MAX.
0.85
V
R
d
(2)
Dynamic resistance
T
j
= 125°C
MAX.
50
m
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25°C
MAX.
5
μA
T
j
= 125°C
1
mA
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
IPAK / D
2
PAK / DPAK / TO-220AB
1.6
°C/W
TO-220AB Insulated
2.5
R
th(j-a)
Junction to ambient
S = 1 cm
2
D
2
PAK
45
°C/W
S = 0.5 cm
2
DPAK
70
TO-220AB / TO-220AB Insulated
60
IPAK
100
S = Copper surface under tab.
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