參數(shù)資料
型號(hào): TA1218F
廠商: Toshiba Corporation
英文描述: TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
中文描述: 東芝雙極線性集成電路硅單片
文件頁(yè)數(shù): 23/40頁(yè)
文件大?。?/td> 637K
代理商: TA1218F
TA1218N/F
2000-09-11 23/40
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Supply voltage
V
CC
P
DMAX
14
V
N
1800
Power dissipation
F (Note7)
(Note6)
1388
mW
Operating temperature
T
opr
20 to 65
°C
Storage temperature
T
stg
55 to 150
°C
Note6: When using the device at temperatures above Ta
=
25°C, reduce the rated power dissipation by 14.4 mW at
TA1218N or 11.1 mW TA1218F per degree of centigrade. (see the diagram below.)
Note7: This device is not proof enough against a strong E-M field by CRT which may cause function errors and/or
poor characteristics. Keeping the distance from CRT to the device longer than 20 cm, or if cannot, placing
shield metal over the device, is recommended in an application.
Ambient temperature Ta (°C)
P
Ambient temperature Ta (°C)
P
1388
0
150
11.1 mW/°C
944
25
65
0
1800
0
150
14.4 mW/°C
1224
25
65
0
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