參數(shù)資料
型號: TA1276AN
廠商: Toshiba Corporation
英文描述: TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
中文描述: 東芝雙極線性集成電路硅單片
文件頁數(shù): 26/86頁
文件大?。?/td> 1049K
代理商: TA1276AN
TA1276AN
2002-03-29
26
CHARACTERISTIC
SYMBOL
TEST
CIR-
CUIT
TEST CONDITION
MIN
TYP.
MAX
UNIT
v
BNe
v
RNe
1.90
4.00
1.90
4.00
v
BPe
1.90
4.00
Residual Carrier Level
v
RPe
f
sc
level
1.90
4.00
v
BHNe
1.90
4.00
v
RHNe
1.90
4.00
v
BHPe
1.90
4.00
Residual Higher Harmonics Level
v
RHPe
f
sc
×2 level
1.90
4.00
mV
p-p
V
BN
B-Y output
1.80
2.15
2.50
3.58NTSC
V
RN
R-Y output
1.90
2.24
2.60
V
BP
B-Y output
1.80
2.15
2.50
Color Difference Output
DC Voltage
4.43NTSC
V
RP
R-Y output
1.90
2.25
2.60
PAL
V
DLP
8.00
8.30
8.60
NTSC
V
DLS
4.00
4.30
4.60
1HDL Output DC Level
SECAM
V
DLN
Output from pin
0.01
0.50
0.20
CP
SCH
7.50
7.80
8.10
HD
SCM
3.95
4.20
4.45
Sand Castle Pulse Height
VD
SCL
2.25
2.50
2.75
SEN
3.70
4.00
4.30
SEP
3.70
4.00
4.30
SECAM Output DC Level
SES
(Note C
4
)
0.40
0.70
1.00
V
vN
CL
3.80
5.83
7.87
vN
CH
2.52
3.88
5.24
vN
BL
3.73
5.74
7.75
NTSC Ident Sensitivity
vN
BH
(Note C
5
)
2.44
3.75
5.06
vP
CL
4.80
6.83
8.87
vP
CH
3.52
4.88
6.24
vP
BL
4.73
6.74
8.75
PAL Ident Sensitivity
vP
BH
(Note C
6
)
3.44
4.75
6.06
mV
p-p
GF
H3
20.7
22.7
24.7
GF
C3
20.2
22.2
24.2
GF
L3
18.2
20.2
22.2
GF
H4
19.1
21.1
23.1
GF
C4
19.4
21.4
23.4
TOF Characteristic
GF
L4
(Note C
7
)
18.8
20.8
22.8
Through
GYs
1.21
0.00
1.06
Normal
GYd
1.21
0.00
1.06
Y
1
In~Y
1
Out AC Gain
Double
S
GYt
20
og
(output level / input
level)
1.21
0.00
1.06
Y
1
In~Y
1
Out Frequency Bandwidth
Gf
Y1
4.0
1.0
0.0
3.58
GT
C3
25
20
Trap Filter Gain
4.43
GT
C4
25
20
dB
3.58NTSC
VD3
1.30
1.60
Y
1
Input Dynamic Range
4.43PAL
VD4
1.30
1.60
Vp-p
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