參數(shù)資料
型號: TB32301
廠商: Toshiba Corporation
英文描述: TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic
中文描述: 東芝的Bi - CMOS硅單片集成電路
文件頁數(shù): 12/17頁
文件大?。?/td> 1038K
代理商: TB32301
TB32301AFL
Electrical Characteristics
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Power supply voltage
VCC_A, VCC_D
3.6
V
Power dissipation
PD
530
mW
Input pin voltage
CLK, DATA, STB, BS,
LD,TXIN
3.6
V
Storage temperature range
Tstg
50 to 150
°C
Note 1: Maximum ratings are a set of specified parameter values which must not be exceeded during operation,
even for an instant.
Operating Ratings
Characteristics
Symbol
Test
Circuit
Test Condition
Rating
Unit
Operating voltage
Vopr1
Ta
=
25°C, ground reference
2.7 to 3.3
V
Operating temperature
Topr1
-20 to 70
°C
Note 2: These ratings specify the ranges within which the device can operate its basic functions, even when
fluctuations in its electrical characteristics occur.
Electrical Characteristics
(Unless otherwise specified, Ta
=
25°C, V
CC
=
3.0 V, f
=
2450 MHz, Bit Rate
=
100kHz,
PA bit setting
=
21, Dev
=
±
160 kHz)
Power Supply
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Current consumption 1 at no signal
ICC1
1
At reception
BS
=
H, PD1
=
0, PD2
=
0,
PD3
=
0
(Note 3)
28.0
35.1
42.0
mA
Current consumption 2 at no signal
ICC2
1
At transmission
BS
=
H, PD1
=
1, PD2
=
0,
PD3
=
1
(Note 3)
19
25.6
42
mA
Supply current at no signal
ICCQ1
1
In battery-saving mode
BS
=
L, PD1
=
1, PD2
=
1
PD3
=
1
(Note 3)
0
10
μ
A
High-level input voltage
VIH
CLK, DATA, STB, BS, TXIN
V
CC
×
0.8
V
CC
V
CC
+
0.2
V
Low-level input voltage
VIL
CLK, DATA, STB, BS, TXIN
0.2
0
V
CC
×
0.2
V
Note 3: Please refer to Section 2.6 “System control register setting”.
Integrated Characteristics
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Minimum input level
VIN(min)
1
S/N = 20dB
-
20.4
dB
μ
V
Demodulation output level
Vod
Vin (LNA)
=
70dB
μ
V
450
mVp-p
Dec./5
th
/2002
12
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