參數(shù)資料
型號(hào)： TCED1100G
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-4
中文描述： Transistor Output Optocouplers Photodarlington Out Single CTR >600%
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 139K
代理商： TCED1100G
Document Number: 83539
Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
799
TCED1100/TCED1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Gain
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
(2)
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
T
j
6
V
60
1.5
100
125
mA
A
mW
°C
t
p
≤
10 μs
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
35
7
80
100
150
125
V
V
mA
mA
mW
°C
t
p
/T = 0.5, t
p
≤
10 ms
V
ISO
P
tot
T
amb
T
stg
T
sld
5000
250
V
RMS
mW
°C
°C
°C
- 40 to + 100
- 55 to + 125
260
2 mm from case, t
≤
10 s
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector ermitter cut-off current
COUPLER
Collector emitter saturation voltage
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 20 mA
V
R
= 0 V, f = 1 MHz
V
F
C
j
1.15
50
1.4
V
pF
I
C
= 1 mA
I
E
= 100 μA
V
CEO
V
ECO
I
CEO
32
7
V
V
nA
V
CE
= 10 V, I
F
= 0, E = 0
15
100
I
F
= 10 mA, I
C
=5 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
Ω
f = 1 MHz
V
CEsat
1
V
Cut-off frequency
f
c
10
kHz
Coupling capacitance
C
k
0.3
pF
CURRENT TRANSFER RATIO
PARAMETER
I
C
/I
F
TEST CONDITION
V
CE
= 2 V, I
F
= 1 mA
PART
TCED1100
SYMBOL
CTR
MIN.
600
TYP.
800
MAX.
UNIT
%
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