參數(shù)資料
型號(hào): TCED4100
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler DC-IN 4-CH Darlington DC-OUT 16-Pin DIL
中文描述: Transistor Output Optocouplers Photodarlington Out Quad CTR >600%
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 148K
代理商: TCED4100
www.vishay.com
806
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83728
Rev. 1.6, 16-May-08
TCED2100/TCED4100
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
130
mA
P
diss
265
mW
V
IOTM
T
si
8
kV
°C
150
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
100 %, t
test
= 1 s
V
pd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
V
pd
R
IO
R
IO
8
kV
kV
Ω
Ω
1.3
10
12
10
11
Insulation resistance
V
IO
= 500 V
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
=
150 °C
(construction test only)
R
IO
10
9
Ω
0
25
50
75
125
0
50
100
150
200
300
P
w
e
W
)
t
T
am
b
- Am
b
ient Temperat
u
re (°C)
150
14
88
7
100
250
Photodarlington
Psi (m
W
)
IR-Diode
Isi (mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IO
W
M
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
SWITCHING CHARACTERISTICS
PARAMETER
Rise time
Fall time
TEST CONDITION
SYMBOL
t
r
t
f
MIN.
TYP.
300
250
MAX.
UNIT
μs
μs
V
CC
= 2 V, I
C
= 10 mA, R
L
= 100
Ω
, (see figure 3)
V
CC
= 2 V, I
C
= 10 mA, R
L
= 100
Ω
, (see figure 3)
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