參數(shù)資料
型號(hào)： TCET1113G
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-4
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR>100-200%
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 142K
代理商： TCET1113G
TCET1110, TCET1110G
Vishay Semiconductors
www.vishay.com
Rev. 2.0, 08-Aug-11
1
Document Number: 83546
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Optocoupler, Phototransistor Output,
High Temperature, 110 °C, Rated
DESCRIPTION
The TCET1110, TCET1110G consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic dual inline package.
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
for appl. class I to IV at mains voltage
300 V
for appl. class I to III at mains voltage
600 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
FEATURES
CTR offered in 9 groups
Isolation materials according to UL 94 V-O
Pollution degree 2
(DIN/VDE 0110/resp. IEC 60664)
Climatic classification 55/100/21
(IEC 60068 part 1)
Special construction: therefore, extra low coupling
capacity of typical 0.2 pF, high common mode rejection
Low temperature coefficient of CTR
Temperature range - 40 °C to + 110 °C
Rated
impulse
voltage
V
IOTM
= 6 kV
peak
Isolation test voltage (partial discharge test voltage)
V
pd
= 1.6 kV
Rated
isolation
voltage
V
IOWM
= 600 V
RMS
Rated recurring peak voltage (repetitive) V
IORM
= 850 V
peak
Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI
175
Thickness through insulation
4 mm
External creepage distance > 8 mm
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
(transient
overvoltage)
(RMS
includes
DC)
AGENCY APPROVALS
UL1577, file no. E52744, double protection
BSI: EN 60065:2002, EN 60950-1:2006
DIN EN 60747-5-2 (VDE 0884)
FIMKO
C
E
A
C
1
2
3
4
17197_4
ORDERING INFORMATION
T
C
E
T
1
1
1
#
-
#
PART NUMBER
PACKAGE
OPTION
AGENCY CERTIFIED/PACKAGE
CTR (%)
5 mA
50 to 600
TCET1110
-
10 mA
100 to 200
TCET1113
TCET1113G
UL, VDE, BSI, FIMKO
DIP-4
DIP-4, 400 mil
63 to 125
TCET1112
-
160 to 320
TCET1114
TCET1114G
7.62 mm
DIP-4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TCET1114 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1114G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1115 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1115G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1116 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100-300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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