參數(shù)資料
型號(hào): TCET1105
廠商: VISHAY SEMICONDUCTORS
元件分類(lèi): 光電耦合器
英文描述: Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-4
中文描述: Transistor Output Optocouplers Phototransistor Out
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 118K
代理商: TCET1105
Document Number: 83503
Rev. 2.3, 14-Oct-09
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
811
TCET1100, TCET1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Temperature
Note
G = lead form 10.16 mm; G is not marked on the body
Notes
(1)
T
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices (DIP).
ORDER INFORMATION
PART
TCET1100
TCET1101
TCET1102
TCET1103
TCET1104
TCET1105
TCET1106
TCET1107
TCET1108
TCET1109
TCET1100G
TCET1101G
TCET1102G
TCET1103G
TCET1104G
TCET1105G
TCET1106G
TCET1107G
TCET1108G
TCET1109G
REMARKS
CTR 50 % to 600 %, DIP-4
CTR 40 % to 80 %, DIP-4
CTR 63 % to 125 %, DIP-4
CTR 100 % to 200 %, DIP-4
CTR 160 % to 320 %, DIP-4
CTR 50 % to 150 %, DIP-4
CTR 100 % to 300 %, DIP-4
CTR 80 % to 160 %, DIP-4
CTR 130 % to 260 %, DIP-4
CTR 200 % to 400 %, DIP-4
CTR 50 % to 600 %, DIP-4, 400 mil
CTR 40 % to 80 %, DIP-4, 400 mil
CTR 63 % to 125 %, DIP-4, 400 mil
CTR 100 % to 200 %, DIP-4, 400 mil
CTR 160 % to 320 %, DIP-4, 400 mil
CTR 50 % to 150 %, DIP-4, 400 mil
CTR 100 % to 300 %, DIP-4, 400 mil
CTR 80 % to 160 %, DIP-4, 400 mil
CTR 130 % to 260 %, DIP-4, 400 mil
CTR 200 % to 400 %, DIP-4, 400 mil
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
COUPLER
Isolation test voltage (RMS)
Operating ambient temperature range
Storage temperature range
Soldering temperature
(2)
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
6
V
60
1.5
mA
A
t
p
10 μs
V
CEO
V
ECO
I
C
I
CM
70
7
50
100
V
V
mA
mA
t
p
/T = 0.5, t
p
10 ms
t = 1 min
V
ISO
T
amb
T
stg
T
sld
5000
V
RMS
°C
°C
°C
- 40 to + 100
- 55 to + 125
260
2 mm from case,
10 s
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TCET1105G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1106 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1106G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 100-300% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1107 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1107G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 80-160% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk