參數(shù)資料
型號: TCET1105
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-4
中文描述: Transistor Output Optocouplers Phototransistor Out
文件頁數(shù): 3/9頁
文件大?。?/td> 118K
代理商: TCET1105
www.vishay.com
812
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83503
Rev. 2.3, 14-Oct-09
TCET1100, TCET1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Temperature
Note
(1)
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note.
(2)
For 2 layer FR4 board (4" x 3" x 0.062").
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
THERMAL CHARACTERISTICS
(1)
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
P
diss
100
mW
Output power dissipation
P
diss
150
mW
Maximum LED junction temperature
T
jmax.
125
°C
Maximum output die junction temperature
T
jmax.
125
°C
Thermal resistance, junction emitter to board
θ
EB
173
°C/W
Thermal resistance, junction emitter to case
θ
EC
149
°C/W
Thermal resistance, junction detector to board
θ
DB
111
°C/W
Thermal resistance, junction detector to case
θ
DC
127
°C/W
Thermal resistance, junction emitter to
junction detector
θ
ED
173
°C/W
Thermal resistance, board to ambient
(2)
θ
BA
197
°C/W
Thermal resistance, case to ambient
(2)
θ
CA
4041
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 50 mA
V
R
= 0, f = 1 MHz
V
F
C
j
1.25
50
1.6
V
pF
I
C
= 1 mA
I
E
= 100 μA
V
CEO
V
ECO
I
CEO
70
7
V
V
nA
V
CE
= 20 V, I
F
= 0 A, E = 0
10
100
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA, R
L
= 100
Ω
f = 1 MHz
V
CEsat
f
c
C
k
0.3
V
110
0.3
kHz
pF
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
相關(guān)PDF資料
PDF描述
TCET1105G Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4
TCET1107G Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4
TCET1104G Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4
TCET1103G Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4
TCET1102G Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TCET1105G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1106 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1106G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 100-300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1107 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1107G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 80-160% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk