參數(shù)資料
型號(hào)： TCET1113
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-4
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR>100-200%
文件頁數(shù)： 3/8頁
文件大?。?/td> 142K
代理商： TCET1113
TCET1110, TCET1110G
Vishay Semiconductors
www.vishay.com
Rev. 2.0, 08-Aug-11
3
Document Number: 83546
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
(1)
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 50 mA
Junction capacitance
V
R
= 0, f = 1 MHz
OUTPUT
Collector emitter voltage
I
C
= 1 mA
Emitter collector voltage
I
E
= 100 μA
Collector emitter cut-off current
V
CE
= 20 V, I
F
= 0 A
COUPLER
Collector emitter saturation voltage
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
= 10 mA,
R
L
= 100
Coupling capacitance
f = 1 MHz
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
C
j
1.25
50
1.6
V
pF
V
CEO
V
ECO
I
CEO
70
7
V
V
nA
10
100
V
CEsat
0.3
V
Cut-off frequency
f
c
110
kHz
C
k
0.6
pF
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
TCET1112,
TCET1112G
TCET1113,
TCET1113G
TCET1114,
TCET1114G
TCET1110,
TCET1110G
TCET1112,
TCET1112G
TCET1113,
TCET1113G
TCET1114,
TCET1114G
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
CTR
22
45
%
CTR
34
70
%
CTR
56
90
%
V
CE
= 5 V, I
F
= 5 mA
CTR
50
600
%
V
CE
= 5 V, I
F
= 10 mA
CTR
63
125
%
CTR
100
200
%
CTR
160
320
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
100 %, t
test
= 1 s
V
pd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
= 10 s,
(see figure 2)
V
IOTM
V
pd
R
IO
R
IO
8
kV
kV
1.3
10
12
10
11
Insulation resistance
V
IO
= 500 V
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
I
si
P
so
V
IOTM
T
si
130
265
6
150
mA
mW
kV
°C
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參數(shù)描述
TCET1113G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100-200% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1114 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1114G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1115 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
TCET1115G 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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