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參數(shù)資料
| 型號： | TCET1113G |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-4 |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR>100-200% |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 142K |
| 代理商： | TCET1113G |
TCET1110, TCET1110G
Vishay Semiconductors
www.vishay.com
Rev. 2.0, 08-Aug-11
2
Document Number: 83546
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to wave profile for soldering conditions for through hole devices (DIP).
Notes
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note.
(1)
For 2 layer FR4 board (4" x 3" x 0.062").
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Forward surge current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
t
p
/T = 0.5, t
p
10 ms
COUPLER
Isolation test voltage (RMS)
Operating ambient temperature range
Storage temperature range
Soldering temperature
(1)
2 mm from case,
10 s
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
6
V
60
1.5
mA
A
t
p
10 μs
V
CEO
V
ECO
I
C
I
CM
70
7
50
100
V
V
mA
mA
t = 1 s
V
ISO
T
amb
T
stg
T
sld
5000
V
RMS
°C
°C
°C
- 40 to + 110
- 55 to + 125
260
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
P
diss
70
mW
Output power dissipation
P
diss
70
mW
Maximum LED junction temperature
T
jmax.
125
°C
Maximum output die junction temperature
T
jmax.
125
°C
Thermal resistance, junction emitter to board
EB
173
°C/W
Thermal resistance, junction emitter to case
EC
149
°C/W
Thermal resistance, junction detector to board
DB
111
°C/W
Thermal resistance, junction detector to case
DC
127
°C/W
Thermal resistance, junction emitter to junction
detector
ED
173
°C/W
Thermal resistance, board to ambient
(1)
BA
197
°C/W
Thermal resistance, case to ambient
(1)
CA
4041
°C/W
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
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|---|---|
| TCET1114 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1114G | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1115 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1115G | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 50-150% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1116 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100-300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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