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參數(shù)資料
| 型號(hào)： | TDA4867 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Full bridge current driven vertical deflection booster |
| 中文描述： | 全橋電流驅(qū)動(dòng)垂直偏轉(zhuǎn)助推器 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 426K |
| 代理商： | TDA4867 |
2003 Feb 05
5
Philips Semiconductors
Preliminary specification
Full bridge current driven vertical
deflection booster
TDA4867J
Protection
The output stages are protected against:
Thermal overshoot in normal operation
Short-circuit of the coil (pins OUTB and OUTA).
Guard circuit
The internal guard circuit provides a blanking signal for the
CRT. The guard signal is active HIGH:
At thermal overshoot
During flyback
When missing flyback supply voltage
When power supply voltage too low, V
P
< V
P(min)
.
The internal guard circuit will not be activated, if the input
signals on pins INP and INN delivered from the driver
circuit are out of range or at short-circuit of the coil
(pins OUTB and OUTA).
For this reason an external guard circuit can be applied to
detect failures of the deflection (see Fig.5). This circuit will
be activated when flyback pulses are missing, which is the
indication of any abnormal operation.
The guard output pin can be used as input for the power
save mode. A current or a voltage has to be applied to the
pin. In this case the output stages are switched off
completely.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages referenced to ground (pin GND);
unless otherwise specified.
Notes
1.
2.
3.
4.
Maximum output currents I
OUTB
and I
OUTA
are limited by current protection.
Internally limited by thermal protection; will be activated for T
j
≥
150
°
C.
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
resistor.
Machine model: equivalent to discharging a 200 pF capacitor through a 0.75
μ
H inductance.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
V
FB
I
FB
V
INP
, V
INN
I
INP
, I
INN
V
OUTB
V
OUTA
I
OUTB
, I
OUTA
output current
V
FEEDB
feedback voltage
I
FEEDB
feedback current
V
GUARD
guard voltage
I
GUARD
guard current
T
stg
storage temperature
T
amb
ambient temperature
T
j
junction temperature
V
esd
electrostatic discharge voltage
supply voltage
flyback supply voltage
flyback supply current
input voltage
input current
output voltage on pin OUTB
output voltage on pin OUTA
0
0
0
0
0
0
0
0
0
0
0
0
20
20
20
4000
250
30
60
±
1.8
5
±
5
V
P
V
FB
±
1.6
V
P
±
5
10
±
5
+150
+75
+150
+4000
+250
V
V
A
V
mA
V
V
A
V
mA
V
mA
°
C
°
C
°
C
V
V
note 1
note 2
note 3
note 4
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