參數(shù)資料
型號(hào)： TDA5153
廠商： NXP Semiconductors N.V.
英文描述： Pre-amplifier for Hard Disk Drive HDD with MR-read/inductive write heads
中文描述： 預(yù)硬盤驅(qū)動(dòng)器硬盤驅(qū)動(dòng)器放大器MR-read/inductive寫磁頭
文件頁(yè)數(shù)： 21/28頁(yè)
文件大?。?/td> 128K
代理商： TDA5153
1997 Jul 02
21
Philips Semiconductors
Preliminary specification
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
TDA5153
t
st(W)
write settle times; note 12
from 50%of the falling edge of
R/W to 90% of the steady state
write current (in Write Mode)
from rising edge of R/W to
I
WR
-programmed /10
(I
WR
= 35 mA)
from falling edge of SEN to
write head active
70
ns
t
off(W)
write amplifier off time
50
ns
t
sw(W)
head switching (in write mode),
and standby to write head active
sleep to (and from) any other
modes
50
70
ns
t
sw(S)
100
μ
s
DC characteristics
I
CC(R)
I
CC(W)
supply current; note 13
supply current; note 14
read mode; I
MR
= 10 mA
write mode; I
WR
= 35 mA
from V
CC
(5 V)
from V
CC(WD)
(5 to 8 V)
72
80
mA
33
54
0.25
0.025
1.32
41
61
1
mA
mA
mA
mA
V
I
DD(stb)
I
DD(S)
V
ref
standby mode supply current
sleep mode supply current
reference voltage for R
ext
static
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes to the characteristics
1.
The differential voltage gain depends on the MR
resistance. It can be improved by programming the
d4 bit in the configuration register using the serial
interface.
2.
The gain boost implements a pole-zero combination:
The +3 dB gain boost corner frequency is
8 d3
4 d2
2 d1
1 d0
+
+
+
(
The
3 dB gain attenuation corner frequency is
8 d3
4 d2
2 d1
+
+
(
where d3, d2, d1, d0 are bits (0, 1) to be programmed
via the Serial Interface. In practical use, the bandwidth
is limited by the inductance of the connection between
the MR heads and the pre-amplifier.
Noise calculation
a)
Definitions:
The amplifier has a low-ohmic input.
No lead resistance is taken into account. The input
referred noise voltage, excluding the noise of the
MR resistors, is defined as follows:
V
v
3.
where G
v
is the voltage gain and V
no
is the noise
voltage at the output of the amplifier, k is the
)
-------------------------------800 MHz
1 d0
+
)
-------------------------------800 MHz
V
nir
2
-G
2
4kT
R
MR1
R
MR2
+
(
)
×
V
–
=
Boltzmann constant and T is the temperature in K.
The noise figure is defined as follows:
V
G
4kT
R
MR1
in 1 Hz bandwidth. Note that R
MR
includes all
resistances between Rx or Ry to ground.
b)
Noise figure versus I
MR
and R
MR
:
Table 1 shows
the variation of the noise figure with I
MR
(mA) and
R
MR
(
).
c)
Input noise voltage consideration:
the input
referred noise voltage calculation can significantly
be different (from 1.0 to 0.44 nV/
√
Hz for instance)
by taking into account an equivalent
signal-to-noise ratio when using two MR stripes
(28
for each stripe) or one MR stripes (42 W).
It assumes that the signal coming from the head is
larger for a dual stripe head than for a single stripe
head (50% extra signal for dual stripe head).
The channel separation is defined by the ratio of the
gain response of the amplifier using the selected head
H(n) to the gain response of the amplifier using the
adjacent head H(n
±
1), Head H(n) being selected.
4.
F
10
log
--------
2
R
MR2
+
(
)
×
-----------------------------------------------------------
×
dB
=
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