參數(shù)資料
型號(hào)： TE28F128P30T85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁(yè)數(shù)： 72/102頁(yè)
文件大?。?/td> 1609K
代理商： TE28F128P30T85
1-Gbit P30 Family
April 2005
72
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
13.3
Protection Registers
The device contains 17 Protection Registers (PRs) that can be used to implement system security
measures and/or device identification. Each Protection Register can be individually locked.
The first 128-bit Protection Register is comprised of two 64-bit (8-word) segments. The lower 64-
bit segment is pre-programmed at the Intel factory with a unique 64-bit number. The other 64-bit
segment, as well as the other sixteen 128-bit Protection Registers, are blank. Users can program
these registers as needed. When programmed, users can then lock the Protection Register(s) to
prevent additional bit programming (see
Figure 33, “Protection Register Map” on page 73
).
The user-programmable Protection Registers contain one-time programmable (OTP) bits; when
programmed, register bits cannot be erased. Each Protection Register can be accessed multiple
times to program individual bits, as long as the register remains unlocked.
Each Protection Register has an associated Lock Register bit. When a Lock Register bit is
programmed, the associated Protection Register can only be read; it can no longer be programmed.
Additionally, because the Lock Register bits themselves are OTP, when programmed, Lock
Register bits cannot be erased. Therefore, when a Protection Register is locked, it cannot be
unlocked.
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參數(shù)描述
TE28F128P30T85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F128P30XXX 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
TE28F128P33B85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F128P33T85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
TE28F160B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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