參數(shù)資料
型號(hào)： TE28F256P30B85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 7/102頁
文件大?。?/td> 1609K
代理商： TE28F256P30B85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
7
1.0
Introduction
This document provides information about the Intel StrataFlash Embedded Memory (P30) device
and describes its features, operation, and specifications.
1.1
Nomenclature
1.2
Acronyms
1.8 V :
V
CC
(core) voltage range of 1.7 V – 2.0 V
V
CCQ
(I/O) voltage range of 1.7 V – 3.6 V
V
PP
voltage range of 8.5 V – 9.5 V
3.0 V :
9.0 V :
Block :
A group of bits, bytes,1-Gbit P30 Family or words within the
flash memory array that erase simultaneously when the Erase
command is issued to the device. The 1-Gbit P30 Family has
two block sizes: 32-KByte and 128-KByte.
Main block :
An array block that is usually used to store code and/or data.
Main blocks are larger than parameter blocks.
Parameter block :
An array block that is usually used to store frequently changing
data or small system parameters that traditionally would be
stored in EEPROM.
Top parameter device :
A device with its parameter blocks located at the highest
physical address of its memory map.
Bottom parameter device :
A device with its parameter blocks located at the lowest
physical address of its memory map.
BEFP :
Buffer Enhanced Factory Programming
CUI :
Command User Interface
MLC :
Multi-Level Cell
OTP :
One-Time Programmable
PLR :
Protection Lock Register
PR :
Protection Register
RCR :
Read Configuration Register
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F256P30B95 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
TE28F256P30B95A 功能描述:IC FLASH 256MBIT 95NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P30BFA 功能描述:IC FLASH 256MBIT 110NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
TE28F256P30T95 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
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