參數資料
型號： TE28F640P30B85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數： 3/102頁
文件大小： 1609K
代理商： TE28F640P30B85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
3
Contents
1.0
Introduction
...............................................................................................................................7
1.1
Nomenclature .......................................................................................................................7
1.2
Acronyms..............................................................................................................................7
1.3
Conventions..........................................................................................................................8
Functional Overview
..............................................................................................................9
Package Information
............................................................................................................10
3.1
56-Lead TSOP Package.....................................................................................................10
3.2
64-Ball Easy BGA Package................................................................................................12
3.3
QUAD+ SCSP Packages....................................................................................................13
Ballout and Signal Descriptions
......................................................................................17
4.1
Signal Ballout......................................................................................................................17
4.2
Signal Descriptions.............................................................................................................20
4.3
SCSP Configurations..........................................................................................................22
4.4
Memory Maps.....................................................................................................................24
Maximum Ratings and Operating Conditions
...........................................................29
5.1
Absolute Maximum Ratings................................................................................................29
5.2
Operating Conditions..........................................................................................................30
Electrical Specifications
.....................................................................................................31
6.1
DC Current Characteristics.................................................................................................31
6.2
DC Voltage Characteristics.................................................................................................32
AC Characteristics
................................................................................................................33
7.1
AC Test Conditions.............................................................................................................33
7.2
Capacitance........................................................................................................................34
7.3
AC Read Specifications......................................................................................................35
7.4
AC Write Specifications ......................................................................................................41
7.5
Program and Erase Characteristics....................................................................................45
Power and Reset Specifications
.....................................................................................46
8.1
Power Up and Down...........................................................................................................46
8.2
Reset Specifications ...........................................................................................................46
8.3
Power Supply Decoupling...................................................................................................47
Device Operations
.................................................................................................................48
9.1
Bus Operations...................................................................................................................48
9.1.1
Reads ....................................................................................................................48
9.1.2
Writes.....................................................................................................................49
9.1.3
Output Disable.......................................................................................................49
9.1.4
Standby..................................................................................................................49
9.1.5
Reset .....................................................................................................................49
9.2
Device Commands .............................................................................................................50
9.3
Command Definitions .........................................................................................................51
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
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相關代理商/技術參數
參數描述
TE28F640P30B85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
TE28F640P30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
TE28F640P30T85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
TE28F640P33B85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
TE28F640P33T85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR)
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