參數(shù)資料
型號: TGA2513-SM
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: 2-20 GHz LNA with AGC
中文描述: 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 4 X 4 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, QFN-12
文件頁數(shù): 2/10頁
文件大小: 189K
代理商: TGA2513-SM
Advance Product Information
January 19, 2006
TGA2513-SM
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
V
+
PARAMETER
VALUE
7 V
NOTES
2/
Positive Supply Voltage
V
g1
Gate 1 Supply Voltage Range
-2V TO 0 V
V
g2
I
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
Gate 2 Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
-0.5 V TO +3.5 V
151 mA
10 mA
21 dBm
See note 3
117
°
C
260
°
C
-65 to 117
°
C
2/
2/
2/, 3/
4/, 5/
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed P
D
.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (117
°
C – TBASE
°
C) / 32 (
°
C/W)
4/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
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