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參數(shù)資料
| 型號： | TGA2904-FL |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | Ku Band 2 Watt Packaged Amplifier |
| 中文描述： | 13000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.700 X 0.330 INCH, 0.100 INCH HEIGHT, ROHS COMPLIANT PACKAGE-10 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 159K |
| 代理商： | TGA2904-FL |
Advance Product Information
April 5, 2006
TGA2904-FL
2
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
TABLE I
MAXIMUM RATINGS 1/
Symbol
Vd
Vg
Idq
| Ig |
Parameter
Value
Notes
Drain Supply Voltage
8 V
2/
Gate Supply Voltage Range
-5V to 0V
Drain Supply Current (Quiescent)
1.3 A
2/
Gate Current
18 mA
P
IN
Input Continuous Wave Power
21 dBm
2/
P
D
Power Dissipation
5 W + (85
°
C- T
B
)/13
2/ 3/
T
CH
Operating Channel Temperature
150
0
C
260
0
C
4/ 5/
T
M
Mounting Temperature
(30 Seconds)
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed
P
D
.
3/ T
B
= Package backside temperature in degrees C.
4/
These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(Vd = 7 V, Idq = 680 mA)
SYMBOL
PARAMETER
TEST CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 13 –17 GHz
33
dB
IRL
Input Return Loss
F = 13 –17 GHz
10
dB
ORL
Output Return Loss
F = 13 –17 GHz
10
dB
PWR
Output Power @ Pin = +5 dBm
F = 13 –15 GHz
34
dBm
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| TGA2923SG | 制造商:TriQuint Semiconductor 功能描述:RF & MW POWER AMPLIFIER |
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