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參數(shù)資料
| 型號(hào)： | TGA4042-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | Q-Band Driver Amplifier |
| 中文描述： | 41000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.126 X 0.086 INCH, 0.004 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 327K |
| 代理商： | TGA4042-EPU |
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 2, 2004
TGA4042-EPU
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
8 V
2/
Vg
Gate Voltage Range
-5 TO 0 V
Id
Drain Current
294 mA
2/ 3/
Ig
Gate Current
14 mA
3/
P
IN
Input Continuous Wave Power
21 dBm
P
D
Power Dissipation
3.3 W
150
0
C
320
0
C
-65 to 150
0
C
2/ 4/
T
CH
Operating Channel Temperature
5/ 6/
T
M
Mounting Temperature (30 Seconds)
T
STG
Storage Temperature
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is
reduced to 1E+6 hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(Ta = 25
0
C, Nominal)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNITS
I
DSS,Q1
Saturated Drain Current
20
57
94
mA
G
M,Q1
Transconductance
44
75
106
mS
V
BVGS,Q1
Breakdown Voltage Gate-Source
-30
-21
-8
V
V
BVGD,Q1 & Q3
Breakdown Voltage Gate-Drain
-30
-21
-8
V
V
P,Q1-Q6
Pinch-Off Voltage
-1.5
-1
-0.5
V
Q1& Q2 are 200 um FETs, Q3 & Q4 are 240 um FETs, Q5 & Q6 are 400 um FETs
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