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參數(shù)資料
| 型號(hào)： | TGA4042-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | Q-Band Driver Amplifier |
| 中文描述： | 41000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.126 X 0.086 INCH, 0.004 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 327K |
| 代理商： | TGA4042-EPU |
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 2, 2004
TGA4042-EPU
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
PARAMETER
TYPICAL
UNITS
Frequency Range
41 - 45
GHz
Drain Voltage, Vd
6
V
Drain Current, Id
168
mA
Gate Voltage, Vg
-0.5
V
Small Signal Gain, S21
14
dB
Input Return Loss, S11
17
dB
Output Return Loss, S22
20
dB
Output Power @ 1 dB Compression Gain, P1dB
18
dBm
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST
CONDITIONS
T
CH
(
O
C)
R
q
JC
(
°
C/W)
T
M
(HRS)
R
θ
JC
Thermal Resistance
(channel to backside of carrier)
Vd = 6 V
I
D
= 168 mA
Pdiss = 1.008 W
92.58
22.40
2.7E+8
Note
: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70
°
C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
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