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參數(shù)資料
| 型號： | TGA8659-FL |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 13 - 15 GHz 4W Power Amplifier |
| 中文描述： | 13000 MHz - 15000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.330 X 0.700 INCH, 0.120 INCH HEIGHT, ROHS COMPLIANT PACKAGE-10 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 288K |
| 代理商： | TGA8659-FL |
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
October 19, 2005
TGA8659-FL
2
Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C ± 5
o
C)
TABLE I
MAXIMUM RATINGS 1/
Symbol
V
+
I
+
P
D
P
IN
T
CH
T
M
T
STG
Parameter
Positive Supply Voltage
Positive Supply Current (Quiescent)
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
1.7 A
13 W
24 dBm
150
°
C
260
°
C
Notes
2/
3/, 4/
-65
°
C to 150
°
C
1/ These values represent the maximum operable values of this device
2/ Total current for the entire MMIC
3/ These ratings apply to each individual FET
4/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction temperatures
be maintained at the lowest possible levels.
Parameter
Units
V
A
dB
Typical
7
1.3
25
0.1
10
10
> 50
36
41
30
-0.01
Drain Operating Voltage
Quiescent Current
Small Signal Gain
Gain Flatness (Freq = 13.5 - 15 GHz)
Input Return Loss (Linear Small Signal)
Output Return Loss (Linear Small Signal)
Reverse Isolation
CW Output Power @Psat at 14.5GHz
TOI at 14.5 GHz with Pout/tone of 28 dBm
Power Added Efficiency@Psat
P1dB temperature coeff. TC (-40 to +70 °C) dB/deg C
dB/100MHz
dB
dB
dB
dBm
dBm
%
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