參數(shù)資料
型號: TGA9070-SCC
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: 23 - 29 GHz High Power Amplifier
中文描述: 23000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 4.10 X 3.00 MM, DIE-11
文件頁數(shù): 7/7頁
文件大?。?/td> 201K
代理商: TGA9070-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
7
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
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AuSn (80/20) solder with limited exposure to temperatures at or above 300
Γ
C
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
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vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
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thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200
Γ
C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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