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參數(shù)資料
| 型號： | TGF4112-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12 mm Discrete HFET |
| 中文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 153K |
| 代理商： | TGF4112-EPU |
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
Web: www.triquint.com
9
Application circuit for the TGF4112-EPU at 2.3 GHz
The FET is soldered using AuSn solder at 300
°
C for 30 secs. Input matching network is 0.381 mm
ZrSn Tioxide substrates (Er = 38). Output matching network is 0.381mm Alumina (Er = 9.6). The
design load impedance is between 6
and 7
with the 4 pF output capacitance of the FET included
in the output network. For further explanation refer to the application note “Designing High Efficiency
Amplifiers using HFETs”
.
The carrier plate is 0.51 mm gold plated copper molybdenum. Gold wire
0.018 mm diameter is used for the bonds. Three gate bonds are required with a length of 0.42 mm.
Six drain bonds are required with a length of 0.45 mm. Bondwire end points on the FET are in the
middle of the bond pad. Refer to the figures above for bondwire locations. Connection between the 50
ohm line input to the input match is made through a parallel RC network. R1 in this network is 10
ohms, and C1 is 5.6 pF. R1 and C1 are surface mount 0603 piece parts.
相關PDF資料 |
PDF描述 |
|---|---|
| TGF4118 | 18 mm Discrete HFET |
| TGF4118-EPU | 18 mm Discrete HFET |
| TGF4124 | 24 mm Discrete HFET |
| TGF4124-EPU | 24 mm Discrete HFET |
| TGF4230-SCC | DC - 12 GHz Discrete HFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TGF4118 | 功能描述:射頻GaAs晶體管 DC-6.0GHz 7 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| TGF4118-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:18 mm Discrete HFET |
| TGF4124 | 功能描述:射頻GaAs晶體管 DC-4.0GHz 10 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| TGF4124-EPU | 制造商:TriQuint Semiconductor 功能描述:DC-4.0GHZ 10 WATT HFET |
| TGF4230 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:1.2mm Discrete HFET |
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