參數(shù)資料
型號: TGF4230-EEU
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 1.2mm Discrete HFET
中文描述: X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
封裝: DIE-4
文件頁數(shù): 1/7頁
文件大?。?/td> 178K
代理商: TGF4230-EEU
TGF4230-EEU
Discr
4230
1.2mm
ete HFET
G
1200 μm X 0.5 μm HFET
G
Nominal Pout of 28.5-dBm at 8.5-GHz
G
Nominal Gain of 10.0-dB at 8.5-GHz
G
Nominal PAE of 55% at 8.5-GHz
G
Suitable for High-Reliability Applications
G
0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)
The Triquint TGF4230 -EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Effect Transistor (HFET) designed for high-efficiency power applications up to 1 2- GHz in Class A and
Class AB operation.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods
as well as thermocompression and thermosonic wire-bonding processes. The TGF4230-EEU is
readily assembled using automatic equipment.
PHOTO ENLARGEMENT
DESCRIPTION
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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相關代理商/技術參數(shù)
參數(shù)描述
TGF4230-SCC 功能描述:射頻GaAs晶體管 DC-12.0GHz 0.7W HFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
TGF4240 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2.4mm Discrete HFET
TGF4240-EPU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2.4mm Discrete HFET
TGF4240-SCC 功能描述:射頻GaAs晶體管 DC-12.0GHz 1.4 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
TGF4250 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:4.8 mm Discrete HFET