- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373636 > TGF4250 (TriQuint Semiconductor,Inc.) 4.8 mm Discrete HFET PDF資料下載
參數(shù)資料
| 型號： | TGF4250 |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | 4.8 mm Discrete HFET |
| 中文描述： | 四點八毫米離散異質(zhì)結(jié)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 179K |
| 代理商： | TGF4250 |
ete HFET
4250
TGF4250-EEU
4.8 mm Discr
G
G
G
G
G
G
4800 μm x 0.5 μm HFET
Nominal Pout of 34-dBm at 8.5-GHz
Nominal Gain of 8.5-dB at 8.5-GHz
Nominal PAE of 53% at 8.5-GHz
Suitable for high reliability applications
0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field
Effect Transistor (HFET) designed for high efficiency power applications up to 10.5-GHz in Class A and
Class AB operation. Typical performance at 2-GHz is 34 -dBm power output, 13-dB gain, and 63% PAE.
Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach
methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4250-EEU
is readily assembled using automatic equipment.
PHOTO ENLARGEMENT
DESCRIPTION
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF4250-EEU | 4.8 mm Discrete HFET |
| TGF4260-SCC | 9.6 mm Discrete HFET |
| TGF4260 | 9.6mm Discrete HFET |
| TGF4260-EPU | 9.6mm Discrete HFET |
| TGF4350 | 300um Discrete pHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF4250-EEU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:4.8 mm Discrete HFET |
| TGF4250-SCC | 功能描述:射頻GaAs晶體管 DC-10.5GHz 2.5 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF4260 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:9.6mm Discrete HFET |
| TGF4260-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:9.6mm Discrete HFET |
| TGF4260-SCC | 功能描述:射頻GaAs晶體管 DC-10.5GHz 5 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。