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參數(shù)資料
| 型號： | TGF4230-SCC |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DC - 12 GHz Discrete HFET |
| 中文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封裝： | DIE-4 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 226K |
| 代理商： | TGF4230-SCC |
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
TGF4230-SCC
9
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 C.
Note: Die are shipped in gel pack unless otherwise specified.
相關PDF資料 |
PDF描述 |
|---|---|
| TGF4230 | 1.2mm Discrete HFET |
| TGF4230-EEU | 1.2mm Discrete HFET |
| TGF4240 | 2.4mm Discrete HFET |
| TGF4240-EPU | 2.4mm Discrete HFET |
| TGF4240-SCC | 2.4 mm Discrete HFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TGF4240 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2.4mm Discrete HFET |
| TGF4240-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2.4mm Discrete HFET |
| TGF4240-SCC | 功能描述:射頻GaAs晶體管 DC-12.0GHz 1.4 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| TGF4250 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:4.8 mm Discrete HFET |
| TGF4250-EEU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:4.8 mm Discrete HFET |
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