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參數(shù)資料
| 型號： | TH50VSF2580AASB |
| 廠商： | Toshiba Corporation |
| 英文描述： | GT 5C 5#16 PIN RECP WALL RM |
| 中文描述： | SRAM和閃存混合多芯片封裝 |
| 文件頁數(shù)： | 26/50頁 |
| 文件大小： | 546K |
| 代理商： | TH50VSF2580AASB |
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TH50VSF2580/2581AASB
2001-10-26 26/50
Hidden ROM Area
The TH50VSF2580/2581AASB features a 64-Kbyte hidden ROM area which is separate from the memory
cells. The area consists of one block. Data Read, Write and Protect can be performed on this block. Because
Protect cannot be released, once the block is protected, data in the block cannot be overwritten.
The hidden ROM area is located in the address space indicated in the HIDDEN ROM AREA ADDRESS
TABLE. To access the Hidden ROM area, input a Hidden ROM Mode Entry command. The device now enters
Hidden ROM Mode, allowing Read, Write, Erase and Block Protect to be executed. Write and Erase operations
are the same as auto operations except that the device is in Hidden ROM Mode. However, regarding write
operation, Accelaration mode can not be performed during Hidden ROM mode. To protect the hidden ROM area,
use the block protection function. The operation of Block Protect here is the same as a normal Block Protect
except that V
IH
rather than V
ID
is input to RESET . Once the block has been protected, protection cannot be
released, even using the temporary block unprotection function. Use Block Protect carefully. Note that in
Hidden ROM Mode, simultaneous operation cannot be performed. Therefore, do not attempt to access areas
other than the hidden ROM area.
To exit Hidden ROM Mode, use the Hidden ROM Mode Exit command. This will return the device to Read
Mode.
HIDDEN ROM AREA ADDRESS TABLE
BYTE MODE
WORD MODE
TYPE
BOOT BLOCK
ARCHITECTURE
ADDRESS RANGE
SIZE
ADDRESS RANGE
SIZE
TH50VSF2580AASB
TOP BOOT BLOCK
3F0000H~3FFFFFH
64 Kbytes
1F8000H~1FFFFFH
32 Kwords
TH50VSF2581AASB
BOTTOM BOOT BLOCK
000000H~00FFFFH
64 Kbytes
000000H~007FFFH
32 Kwords
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TH50VSF2581AASB | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:7; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight |
| TH50VSF3582AASB | TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
| TH50VSF3583AASB | TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
| TH50VSF3680 | 0.4W, 75V, 0.3A, SIGNAL DIODE, SOD123 |
| TH50VSF3681AASB | GT 10C 10#16 SKT RECP BOX RM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TH50VSF2581AASB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF2582 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF2582AASB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF2583AASB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF3582AASB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
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