參數(shù)資料
型號(hào): TH50VSF3582AASB
廠商: Toshiba Corporation
英文描述: TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
中文描述: 東芝多芯片集成電路硅柵CMOS
文件頁(yè)數(shù): 29/50頁(yè)
文件大?。?/td> 548K
代理商: TH50VSF3582AASB
TH50VSF3582/3583AASB
2001-06-08 29/50
HARDWARE SEQUENCE FLAGS FOR FLASH MEMORY
The TH50VSF3582/3583AASB has a Hardware Sequence flag which allows the device status to be determined
during an auto mode operation. The output data is read out using the same timing as that used when CEF
=
OE
=
V
IL
in Read Mode. The
BY
/
RY
output can be either High or Low.
The device re-enters Read Mode automatically after an auto mode operation has been completed successfully. The
Hardware Sequence flag is read to determine the device status and the result of the operation is verified by
comparing the read-out data with the original data.
DQ7 (DATA
During an Auto-Program or auto-erase operation, the device status can be determined using the data polling
function. DATA polling begins on the rising edge of WE in the last bus cycle. In an Auto-Program operation,
DQ7 outputs inverted data during the programming operation and outputs actual data after programming has
finished. In an auto-erase operation, DQ7 outputs 0 during the erase operation and 1 when the erase operation
has finished. If an auto mode operation fails, DQ7 simply outputs the data.
When the operation has finished, the address latch is reset. Data polling is asynchronous with the OE
signal.
DQ6 (Toggle bit 1)
The device status can be determined by the Toggle Bit function during an Auto Program or Auto Erase
operation. The Toggle bit begins toggling on the rising edge of WE in the last bus cycle. DQ6 alternately
outputs a 0 or a 1 for each attempt (OE access) while CEF
=
V
IL
while the device is busy. When the internal
operation has been completed, toggling stops and valid memory cell data can be read by subsequent reading. If
the operation failed, the DQ6 output toggles.
DQ6 toggles for around 3
μ
s when an attempt is made to execute an Auto Program operation on a protected
block. It then stops toggling. DQ6 toggles for around 100
μ
s when an attempt is made to execute an Auto Erase
operation on a protected block. It then stops toggling. After toggling stops the device returns to Read mode.
DQ5 (internal time-out)
DQ5 outputs a 1 when the Internal Timer has timed out during a Program or Erase operation. This indicates
that the operation has not completed within the allotted time.
An attempt to program 1 into a cell containing 0 will fail (see Auto Program mode). DQ5 outputs 1 in this case.
Either a hardware reset or a software reset command is required to put the device into Read mode.
相關(guān)PDF資料
PDF描述
TH50VSF3583AASB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
TH50VSF3680 0.4W, 75V, 0.3A, SIGNAL DIODE, SOD123
TH50VSF3681AASB GT 10C 10#16 SKT RECP BOX RM
TH513 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TH50VSF3583AASB 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
TH50VSF3680 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
TH50VSF3681AASB 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
TH510100000 制造商:JOHNSON ELECTRIC 功能描述:LIGHT PUSHBUTTON SWITCHES, 5 AMPS, 250VAC, RECTANGULAR MAINTAINED SWITCH
TH510108000 制造商:Johnson Electric / Saia-Burgess 功能描述:S.P. LATCHING SWITCH