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參數(shù)資料
| 型號： | TIM1314-30L |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 50K |
| 代理商： | TIM1314-30L |
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
2
T IM1314-30L
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage
PACKAGE OUTLINE (7-AA03A)
A
W
°
C
°
C
20
136
175
-65 to +175
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
4
0.5
±
0.1
2
±
0
8
±
0
1
±
0
0
+
-
2
2
1
±
0
2
±
0
21.9
±
0.3
25.5 MAX.
4 - R0.5
(1)
(2)
(2)
(3)
16.4 MAX.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIM1414-10LA | MICROWAVE POWER GaAs FET |
| TIM1414-2L | MICROWAVE POWER GaAs FET |
| TIM1414-4LA | MICROWAVE POWER GaAs FET |
| TIM1414-5-252 | POWER GAAS FET |
| TIM1414-7 | MICROWAVE POWER GAAS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM1314-30L_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz |
| TIM1314-9L | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED,14GHZ,60W - Trays |
| TIM1414-10LA | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| TIM1414-10LA-252 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz |
| TIM1414-15-252 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 14GHZ, 60W - Trays |
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