參數(shù)資料
型號(hào)： TIM1414-4LA
廠商： Toshiba Corporation
英文描述： MICROWAVE POWER GaAs FET
中文描述： 微波功率GaAs場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 97K
代理商： TIM1414-4LA
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1414-4LA
TECHNICAL DATA
PRE L IMINARY
F E A T U R E S
n
HIGH POWERT
n
BROAD BAND INTERNALLY MATCHED
P1dB=36.5dBm at 14.0GHz to 14.5GHz
n
HERMETICALLY SEALED PACKAGE
n
HIGH GAIN
G1dB=6.5dB at 14.0GHz to 14.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
rd
Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
NOTE : Two Tone Test, Po=25dBm (Single Carrier Level)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
SYMBOL
P
1dB
CONDITION
UNIT
dBm
MIN.
36.0
TYP. MAX.
36.5
G
1dB
dB
6.0
6.5
I
DS1
G
η
add
IM3
A
dB
%
dBc
-42
1.7
23
-45
2.2
±
0.8
VDS= 9V
f= 14.0 to 14.5GHz
IDS2
Tch
NOTE
A
°
C
1.7
2.2
70
V
DS
X I
DS
X R
th(c-c)
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
V
DS
=
3V
I
DS
= 2.0A
V
DS
=
3V
I
DS
= 60mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -60
μ
A
UNIT
mS
MIN.
TYP.
1200
MAX.
Pinch-off Voltage
V
GSoff
V
-2.0
-3.5
-5.0
Saturated Drain Current
I
DSS
A
4.0
5.2
Gate-Source Breakdown
Voltage
Thermal Resistance
V
GSO
V
-5
R
th(c-c)
Channel to Case
°
C/W
2.9
3.5
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002
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