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參數(shù)資料
| 型號： | TIM1414-4LA |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 97K |
| 代理商： | TIM1414-4LA |
2
TIM1414-4LA
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
PACKAGE OUTLINE (2-9D1B)
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
V
V
A
W
°
C
°
C
15
-5
5.2
30
175
-65 to +175
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
4-R2.4
0.5
±
0.15
13.0
±
0.3
17.0 MAX.
9
±
0
2
±
0
2
2
0
1
±
0
1
±
0
8.5 MAX.
0
3
-
+
Gate
Source
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIM1414-5-252 | POWER GAAS FET |
| TIM1414-7 | MICROWAVE POWER GAAS FET |
| TIM3438-16SL | MICROWAVE POWER GaAs FET |
| TIM3536-60 | MICROWAVE POWER GAAS FET |
| TIM3742-16SL | MICRO WAVE POWER GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM1414-5-252 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 14GHZ, 30W - Trays |
| TIM1414-5L | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,14GHZ,30W - Trays |
| TIM1414-7 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 14GHZ,30W - Trays |
| TIM1414-7-252 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,14GHZ, 30W - Trays |
| TIM1414-8 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
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