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參數(shù)資料
| 型號(hào)： | TIM3742-35SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 449K |
| 代理商： | TIM3742-35SL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM3742-35SL
TECHNICAL DATA
FEAT URES
n
LOW INTERMODULATION DISTORTION
n
HIGH GAIN
IM3=-45 dBc at Pout= 35.0dBm G1dB=10.0dB at 3.7GHz to 4.2GHz
Single Carrier Level
n
BROAD BAND INTERNALLY MATCHED
n
HIGH POWER
n
HERMETICALLY SEALED PACKAGE
P1dB=45.5dBm at 3.7GHz to 4.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
CONDITIONS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
I
DS1
Gain Flatness
G
Power Added Efficiency
η
add
3rd Order Intermodulation
Distortion
Drain Current
I
DS2
(Single Carrier Level)
Channel Temperature Rise
Tch
UNIT
dBm
MIN. TYP. MAX.
45.0
45.5
P
1dB
G
1dB
dB
9.0
10.0
A
dB
%
dBc
-42
8.0
40
-45
9.0
±
0.8
VDS= 10V
f = 3.7 to 4.2GHz
IM
3
Two Tone Test
Po=35.0dBm
A
°
C
8.0
9.0
100
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended Gate Resistance(Rg) : 28
W
(Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 10.5A
V
GSoff
V
DS
=
3V
I
DS
= 140mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -420
m
A
UNIT
mS
MIN. TYP. MAX.
6500
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
20
26
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.0
1.3
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun., 2006
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