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參數(shù)資料
| 型號： | TIM4450-16UL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | TIM4450-16UL |
2
T IM4450-16UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
V
15
Gate-Source Voltage
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage
PACKAGE OUTLINE (2-16G1B)
A
W
°
C
°
C
14
83.3
175
-65 to +175
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
5
0
0.7
±
0.15
2
±
0
8
±
0
1
±
0
0
+
-
0
2
2
1
±
0
2
±
0
20.4
±
0.3
24.5 MAX.
4
–
C1.0
(1)
(2)
(2)
(3)
16.4 MAX.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIM5964-12UL | MICROWAVE POWER GaAs FET |
| TIM4450-35SL | MICROWAVE POWER GaAs FET |
| TIM4450-4UL | MICROWAVE POWER GaAs FET |
| TIM4450-60SL | LOW INTERMODULATION DISTORTION |
| TIM5053-16SL | MICROWAVE POWER GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM4450-16UL_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz |
| TIM4450-25UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 4GHZ, 100W - Trays |
| TIM4450-30SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 4GHZ, 115W - Trays |
| TIM4450-35SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 5GHZ, 115W - Trays |
| TIM4450-45SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 4GHZ, 125W - Trays |
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