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參數(shù)資料
| 型號： | TIM7785-60SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | TIM7785-60SL |
2
TIM7785-60SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
V
15
Gate-Source Voltage
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
A
26
W
°
C
°
C
187
175
Storage Temperature
PACKAGE OUTLINE (2-16G1B)
-65 to +175
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
5
0
0.7
±
0.15
2
±
0
8
±
0
1
±
0
0
+
-
0
2
2
1
±
0
2
±
0
20.4
±
0.3
24.5 MAX.
4
–
C1.0
16.4 MAX.
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PDF描述 |
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| TIM7785-6UL | MICROWAVE POWER GaAs FET |
| TIM7785-8UL | MICROWAVE POWER GaAs FET |
| TIM8596-2 | MICROWAVE POWER GaAs FET |
| TIM8596-15 | MICROWAVE POWER GaAs FET |
| TIM8596-4 | MICROWAVE POWER GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM7785-60SL_08 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level |
| TIM7785-60ULA | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,51W,PD 187.5W - Trays |
| TIM7785-6UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,32W - Trays |
| TIM7785-6UL_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz |
| TIM7785-8SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,37.5W - Trays |
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