參數(shù)資料
型號： TIP36B
廠商： Power Innovations International, Inc.
英文描述： PNP SILICON POWER TRANSISTORS
中文描述： 進步黨硅功率晶體管
文件頁數(shù)： 2/6頁
文件大?。?/td> 107K
代理商： TIP36B
TIP36, TIP36A, TIP36B, TIP36C
PNP SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 5)
I
B
= 0
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36/36A
TIP36B/36C
-40
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -80 V
V
CE
= -100 V
V
CE
= -120 V
V
CE
= -140 V
V
CE
= -30 V
V
CE
= -60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
-0.7
-0.7
-0.7
-0.7
-1
-1
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
mA
I
EBO
V
EB
= -5 V
I
C
= 0
-1
mA
h
FE
V
CE
= -4 V
V
CE
= -4 V
I
B
= -1.5 A
I
B
= -5 A
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1.5 A
I
C
= -15 A
I
C
= -15 A
I
C
= -25 A
I
C
= -15 A
I
C
= -25 A
(see Notes 5 and 6)
25
10
50
-1.8
-4
-2
-4
V
CE(sat)
(see Notes 5 and 6)
V
V
BE
(see Notes 5 and 6)
V
h
fe
V
CE
= -10 V
I
C
= -1 A
f = 1 kHz
25
|
h
fe
|
V
CE
= -10 V
I
C
= -1 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
1
°C/W
°C/W
35.7
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
t
off
Turn-on time
Turn-off time
I
C
= -15 A
V
BE(off)
= 4.15 V
I
B(on)
= -1.5 A
R
L
= 2
I
B(off)
= 1.5 A
t
p
= 20 μs, dc
≤
2%
1.1
0.8
μs
μs
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