參數(shù)資料
型號: TISP5150H3BJR
廠商: BOURNS INC
元件分類: 浪涌電流限制器
英文描述: FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 150 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
封裝: SMB, 2 PIN
文件頁數(shù): 10/11頁
文件大?。?/td> 286K
代理商: TISP5150H3BJR
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED FEBRUARY 2005
ISDN Device Selection
The ETSI Technical Report ETR 080:1993 defines several range values in terms of maximum and minimum ISDN feeding voltages. The
following table shows that ranges 1 and 2 can use a TISP5110H3BJ protector and ranges 3 to 5 can use a TISP5150H3BJ protector.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
If the impulse generator current exceeds the protector’s current rating then a series resistance can be used to reduce the current to the
protector’s rated value and so prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases the equipment will require verification over a
temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40
°
C to 85
°
C.
If the devices are used in a star-connection, then the ground return protector, Th3 in Figure 13, will conduct the combined current of protectors
Th1 and Th2. Similarly in the bridge connection (Figure 14), the protector Th1 must be rated for the sum of the conductor currents. In these
cases, it may be necessary to include some series resistance in the conductor feed to reduce the impulse current to within the protector’s
ratings.
TISP5xxxH3BJ Overvoltage Protection Series
APPLICATIONS INFORMATION
Range
Feeding Voltage
Standoff Voltage
V
DRM
V
-75
-80
Device Name
Minimum
V
51
66
91
90
105
Maximum
V
69
70
99
110
115
1
2
3
4
5
TISP5095H3BJ
TISP5110H3BJ
-120
TISP5150H3BJ
Standard
Peak Voltage
Setting
V
Voltage
Waveshape
μ
s
2/10
10/1000
10/160
10/560
9/720
9/720
0.5/700
Peak Current
Value
A
Current
Waveshape
μ
s
2/10
10/1000
10/160
10/560
5/320
5/320
0.2/310
TISP5xxxH3BJ
25
°
C Rating
A
Series
Resistance
GR-1089-CORE
2500
1000
1500
800
1500
1000
1500
1500
4000
6000
500
100
200
100
37.5
25
37.5
37.5
100
150
500
100
250
160
200
200
200
0
TIA-968-A
0
0
0
0
0
I3124
ITU-T K.20/21/45
10/700
5/310
200
0
TIA-968-A terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP5150H3BJR-S 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5190H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5190H3BJR 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5190H3BJR-S 功能描述:硅對稱二端開關(guān)元件 PROTECTOR - SINGLE UNIDIRECTIONAL RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5XXXH3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS