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參數(shù)資料
| 型號： | TISP61089HDM |
| 廠商： | Bourns Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -門晶閘管可編程過壓保護(hù) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 151K |
| 代理商： | TISP61089HDM |
MAY 2004 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089HDM Overvoltage Protector
TISP61089HDM
DUAL FORWARD-CONDUCTING P-GATE THYRISTOR
PROGRAMMABLE OVERVOLTAGE PROTECTOR
Device Symbol
Intended for Use in GR-1089-CORE Issue 3 Compliant
Line Cards
Dual, Voltage-Programmable SLIC Protector
– Low 15 mA max. Gate Triggering Current
– Supports Battery Voltages Down to -155 V
– High 150 mA min. Holding Current
Rated for GR-1089-CORE Issue 3 Conditions
How To Order
8-SOIC (210 mil) Package (Top View)
Description
The TISP61089HDM is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction.
The TISP61089HDM limits voltages that exceed the SLIC supply rail voltage. The TISP61089HDM parameters are specified to allow
equipment compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45.
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -155 V. The protector gate is
connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will
then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.
Impulse Waveshape
GR-1089-CORE Test
Section
4.6.7
4.6.8
4.6.7
4.6.7.1
I
PPSM
A
Test #
4
1
1, 3
1
2/10
500
10/1000
100
Meets GR-1089-CORE First Level A.C. Power Fault Conditions
GR-1089-CORE
Section 4.6.10
Test #
1
2
3
4
6
7
8
9
I RMS
Power Fault Duration
A
s
0.33
0.17
1
1
0.5
2.2
3
5
900
900
1
1
30
2
1.1
0.4
GR-1089-CORE Second Level A.C. Power Fault Conditions are
Detailed in the ‘Applications Information’ Section
MD-8SOIC(210)-001-b
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4
5
6
7
8
K1
A
A
K2
G
K1
K2
NC
(Tip)
(Ground)
(Ground)
(Ring)
(Gate)
(Tip)
(Ring)
SD-TISP6-001-a
G
K1
K2
K1
K2
A
A
The negative protection voltage is
controlled by the voltage, V
GG
,
applied to the G terminal.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
............................................... UL Recognized Component
Device
Package
8-SOIC (210 mil)
Carrier
Marking Code
61089H
Standard Quantity
2000
TISP61089HDM
Embossed Tape Reeled
TISP61089HDMR-S
For Lead Free
Termination Finish
Order As
*RHSCOMPIAN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089HDM_07 | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:Overvoltage Protector |
| TISP61089HDMR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089LDR-S | 制造商:Bourns Inc 功能描述:THYRISTOR, SURGE PROTECTOR, -120V, SOIC-8; No. of Circuits:2; Thyristor Type:SLIC Protector; Thyristor Case:SOIC; No. of Pins:8; Breakover Voltage Vbo Max:-64V; Peak Off-State Voltage, Vdrm:-120V |
| TISP61089M | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TISP61089M SLIC Overvoltage Protector |
| TISP61089MDR-S | 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 類別:過電壓，電流，溫度裝置 >> TVS - 晶閘管 系列:- 產(chǎn)品變化通告:Product Discontinuation 19/Jul/2012 標(biāo)準(zhǔn)包裝:2,500 系列:- 電壓 - 擊穿:400V 電壓 - 斷路:320V 電壓 - 導(dǎo)通狀態(tài):4V 電流 - 峰值脈沖(8 x 20µs):250A 電流 - 峰值脈沖(10 x 1000µs):80A 電流 - 保持 (Ih):150mA 元件數(shù):1 電容:29pF 封裝/外殼:DO-214AA，SMB 包裝:帶卷 (TR) |
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