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參數(shù)資料
| 型號(hào)： | TISP61511DR |
| 廠商： | POWER INNOVATIONS LTD |
| 元件分類： | 保護(hù)電路 |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, SOP-8 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 360K |
| 代理商： | TISP61511DR |
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted) (Continued)
Parameter
I
H
Holding current
I
T
= 1 A, di/dt = -1A/ms, V
GG
= -48 V
150
mA
I
GAS
Gate reverse current
V
GG
= -75 V, K and A terminals connected
T
J
= 25
°
C
T
J
= 70
°
C
5
μ
A
50
μ
A
I
GT
V
GT
Gate trigger current
I
T
= 3 A, t
p(g)
≥
20
μ
s, V
GG
= -48 V
I
T
= 3 A, t
p(g)
≥
20
μ
s, V
GG
= -48 V
0.2
5
mA
Gate trigger voltage
2.5
V
C
AK
Anode-cathode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 4)
V
D
= -3 V
V
D
= -48 V
100
pF
50
pF
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Test Conditions
Min
Typ
Max
Unit
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25
°
C
5 cm
2
, FR4 PCB
D Package
170
°
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP61511DR-S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61511D-S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP6151X | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61521 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61521D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DS | 制造商:Bourns Inc 功能描述: |
| TISP61511D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61512P | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61512PS | 制造商:Bourns Inc 功能描述: |
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