- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383948 > TISP61511DR (POWER INNOVATIONS LTD) DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS PDF資料下載
參數(shù)資料
| 型號(hào)： | TISP61511DR |
| 廠商： | POWER INNOVATIONS LTD |
| 元件分類： | 保護(hù)電路 |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, SOP-8 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 360K |
| 代理商： | TISP61511DR |
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
DEVICE PARAMETERS
TISP61511D Gated Protectors
General
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage
breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristors, the existing thyristor terminology
did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic.
Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilized.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the
fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote
an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Bourns approach is to use terms related to the device internal structure, rather than its application usage as a single
device may have many applications each using a different terminology for circuit connection.
Alternative Symbol Cross-Reference Guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols
have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability
will be assumed from the use of this guide.
Parameter
Data Sheet
Symbol
I
TSP
Al
ternative
Symbol
I
PP
I
R
I
RM
I
RG
V
R
V
RM
V
FP
V
SGL
V
gate
V
GATE
V
S
V
MLG
V
MGL
V
GL
V
DGL
V
LG
V
GND/LINE
C
off
Tip
Ring
GND
Gate
R
th
(j-a)
Alternative Parameter
Non-repetitive peak on-state pulse current
Peak pulse current
Off-state current
I
D
Reverse leakage current LINE/GND
Gate reverse current (with A and K terminals connected)
I
GAS
Reverse leakage current GATE/LINE
Off-state voltage
V
D
Reverse voltage LINE/GND
Peak forward recovery voltage
Breakover voltage
V
FRM
V
(BO)
Peak forward voltage LINE/GND
Dynamic switching voltage GND/LINE
Gate voltage, (V
GG
is gate supply voltage referenced
to the A terminal)
V
G
GATE/GND voltage
Repetitive peak off-state voltage
Repetitive peak gate-cathode voltage
Gate-cathode voltage
Gate-cathode voltage at breakover
V
DRM
V
GKM
V
GK
V
GK(BO)
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
GATE/LINE voltage
Dynamic switching voltage GATE/LINE
Cathode-anode voltage
V
K
LINE/GND voltage
Anode-cathode capacitance
Cathode 1 terminal
Cathode 2 terminal
Anode terminal
Gate terminal
Thermal Resistance, junction to ambient
C
AK
K1
K2
A
G
R
θ
JA
Off-state capacitance LINE/GND
Tip terminal
Ring terminal
Ground terminal
Gate terminal
Thermal Resistance, junction to ambient
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP61511DR-S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61511D-S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP6151X | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61521 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61521D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DS | 制造商:Bourns Inc 功能描述: |
| TISP61511D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61512P | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61512PS | 制造商:Bourns Inc 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。