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參數(shù)資料
| 型號： | TLE6711G |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO14 |
| 封裝： | PLASTIC, SOP-14 |
| 文件頁數(shù)： | 3/25頁 |
| 文件大小： | 963K |
| 代理商： | TLE6711G |
TLE 6711
Circuit Description
Data Sheet
11
Rev. 3.4, 2007-08-16
4.3
Boost Converter
The TLE 6711 G/GL contains a fully integrated boost converter (except the boost-diode), which provides a supply
voltage for an energy reserve e.g. an airbag firing system. The regulated boost output voltage
V
BOOST is
programmable by a divider network (external resistors) providing the feedback voltage for the boost feedback pin
BOFB. The energy which is stored in the external electrolytic capacitor at
V
BOOST guarantees accurate airbag firing,
even if the battery is disconnected by a car crash.
The boost inductance
L
BO (typ. 100 H) is PWM-switched by an integrated current limited power DMOS transistor
with a programmable (external resistor
R
R) frequency.
An internal bandgap reference provides a temperature independent, on chip trimmed reference voltage for the
regulation loop. An error amplifier compares the reference voltage with the boost feedback signal
V
BOFB from the
external divider network (determination of the output boost voltage
V
BOOST).
Application note for programming the output voltage at pin
V
BOOST:
(1)
With a PWM (Pulse Width Modulation) comparator the output of the error amplifier is compared to a periodic linear
ramp, provided by a sawtooth signal of the oscillator connected to pin R. A logic signal with variable pulse width
is generated. It passes through the logic circuits (sets the output latch PWM-FF) and driver circuits to the power
switching DMOS. The Schmitt-trigger output resets the output flip-flop PWM-FF by NOR 2. The PWM signal is
gated by the NAND 2 to guarantee a dominant reset.
Figure 8
Boost Converter Block Diagram
Figure 8 shows the most important waveforms during operation; for low, medium and high loads up to overload
condition. The output transistor is switched off immediately if the overcurrent comparator detects an overcurrent
level at the power DMOS or if the sense output switches to low induced by a
V
BOOST undervoltage command.
VBOOST
VBOFBTH
RBO1 RBO2
+
()
RBO2
-------------------------------------
×
=
AEB02946
Pin 1
R
V
min
t
f
r t
r
t
Oscillator
V
max
V
low
t
r
t
r
f t
high
Schmitt-trigger 1
Ramp V
t
Clock
Error-Ramp
Error-Signal
PWM
COMP
+
-
Error-Ramp
Error-Signal
H when
<
=
V
GND
2.8 V
REF
Error
-
+
AMP
Pin 12
BOFB
Pullup
I
A
10
=
GND
COMP
+
-
UV
4 V
thUV
V
Boost
V
GND
thOV
38 V
V
=
COMP
OV
-
+
NOR 1
1
&
OV at
L when
Boost
V
NAND 3
L when
> 175 C
T
j
H when
Overcurrent
H when
< 4 V
Boost
V
H when
> 175 C
j
T
V
or OV at Boost
NAND1
&
Error-FF
&
R
Q
S
Q
L when
Error
NOR 2
1
Error
H when
Error
Gate
Unlock
Detector
NAND 2
&
Q
R
&
S
Q
&
PWM-FF
H =
OFF
H =
ON
1
INV
D-MOS
Power
Gate
Driver
+
COMP
-
OC
V
thOC
18 mV
=
Sense
14.5 m
R
Pin 13
BOGND
H when Outputcurrent > 1.2 A
OVL
Pin 11
GND
BOI
Pin 14
Boost Status
Low if Battery
Disconnected
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