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參數(shù)資料
| 型號： | TLN115AF |
| 廠商： | Toshiba Corporation |
| 英文描述： | Infrared LED GaAs Infrared Emitter |
| 中文描述： | 砷化鎵紅外發(fā)光二極管紅外線發(fā)射器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 210K |
| 代理商： | TLN115AF |
TLN115A(F)
2007-10-01
1
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN115A(F)
Lead(Pb)-Free
Remote
control Systems
High radiant intensity: I
E
= 26mW / sr (typ.)
Wide half
angle value:
θ
1/2 = ±21° (typ.)
Excellent radiant
intensity linearity. Modulation by pulse operation
and high frequency is possible.
TPS703(F) pin photodiode with resin to screen out visible light
available as detector for remote control
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
F
100
mA
Forward current derating
(Ta > 25°C)
Δ
I
F
/ °C
1.33
mA / °C
Pulse forward current
(Note 1)
I
FP
V
R
P
D
T
opr
T
stg
1
A
Reverse voltage
5
V
Power dissipation
150
mW
Operating temperature range
20~75
30~85
°C
Storage temperature range
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width
≦
100
μ
s, repetitive frequency = 100 Hz
Pin Connection
1.
Anode
2.
Cathode
1
2
Optical And Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
—
1.35
1.5
V
Reverse current
I
R
V
R
= 5 V
—
—
10
μ
A
TLN115A (F)
15
26
—
Radiant intensity
I
E
I
F
= 50 mA
TLN115A (B,F)
19
—
—
mW / sr
Radiant power
P
O
I
F
= 50 mA
—
13
—
mW
Capacitance
C
T
V
R
= 0, f = 1 MHz
—
20
—
pF
Peak emission wavelength
λ
P
I
F
= 50 mA
—
950
—
nm
Spectral line half width
Δλ
I
F
= 50 mA
—
50
—
nm
Half value angle
θ
2
1
I
F
= 50 mA
—
±21
—
°
Unit: mm
TOSHIBA
4
6B6
Weight: 0.3 g (typ.)
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