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參數(shù)資料
| 型號： | TLN115AF |
| 廠商： | Toshiba Corporation |
| 英文描述： | Infrared LED GaAs Infrared Emitter |
| 中文描述： | 砷化鎵紅外發(fā)光二極管紅外線發(fā)射器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 210K |
| 代理商： | TLN115AF |
TLN115A(F)
2007-10-01
2
Precautions
Please be careful of the followings.
1.
Soldering must be performed under the stopper.
2.
Soldering temperature : 260°C max
Soldering time : 5 s max
3.
When forming the leads, bend each lead under the 2 mm from the body of the device.
Soldering must be performed after the leads have been formed.
4.
Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
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