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| 型號(hào)： | TLS24310 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Magnetoresistive/Thin-Film Read/Write Preamplifiers(10通道磁阻/薄膜讀/寫用前置放大器) |
| 中文描述： | 磁阻/薄膜讀/寫前置放大器（10通道磁阻/薄膜讀/寫用前置放大器） |
| 文件頁數(shù)： | 15/31頁 |
| 文件大小： | 676K |
| 代理商： | TLS24310 |
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TLS24308, TLS24310, TLS24318, TLS24320
8- AND 10-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS009 – JANUARY 1996
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended free-air temperature range (unless otherwise noted),
read mode, V
CC
= 5 V, R
(MR)
= 10
to 40
, I
I(BIAS)
= 7 mA to 17 mA, T
A
= 25
°
C, C1 = 0.022
μ
F,
C2 = 0.01
μ
F, L
(lead)
= 50 nH (see Figure 1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VI(BC)
Setting voltage, bias current
2
V
VI(MR)
MR bi
MR-bias voltage
Selected head
II(BIAS) = 16 mA, R(MR) = 20
320
336
Unselected head
0
50
mV
During head select
(transient)
0
550
VO(RD)
Preamplifier output
voltage at RDX and
RDY
Read mode
VCC–2.2
V
Other than read mode
VOO
Output offset voltage
Read mode
–200
0
200
mV
VI(noise)
Input noise voltage
See Note 4
R(MR) = 20
,
f = 1 to 50 MHz
0.55
0.68 nV Hz
VI(BH)
Voltage, buffered head
VI(BH) = VI(MR)
×
5(20
/16 mA)
1.5
1.6
1.7
V
Dynamic range
THD
≤
–40 dB at 5 MHz,
R(MR) = 20
R(MR) = 10
R(MR) = 20
R(MR) = 30
R(MR) = 40
1
1.5
mV
G(D)
G i
Gain differential voltage
Gain, differential voltage
i l
320
393
464
V/V
195
230
265
137
161
186
104
123
142
G(BIAS – MR)
IO
Gain, bias current-to-MR-head current
19
20
21
A/A
Output current
1.5
mA
Ilkg
Bias current leakage,
unselected head
Read/write mode
–10
10
μ
A
MR-bias-current tolerance
–5%
5%
BW
Bandwidth
d id h
Low frequency (–3 dB)
High frequency (–1 dB)
VI = 500 V
μ
V,
L(lead) = 0 nH
R(MR) = 20
,
0.22
65
0.42
MHz
55
High frequency (–3 dB)
100
140
ri
Input resistance
Selected head
R(MR)= 20
,
II(BIAS) =16 mA
2.3
5.5
ro(D)
Differential output
resistance
Read mode
f = 20 MHz
50
PSRR
Power supply input-referred noise-rejection
ratio
f = 1 MHz to 25 MHz,
VI = 100 mVp-p
f = 1 MHz to 25 MHz
43
50
dB
SP
Channel separation
50
60
dB
f = 26 MHz to 65 MHz
30
40
td
Delay time, range of group
10 MHz to 65 MHz,
R(MR) = 20
,
L(lead) = 0 nH
0.8
ns
High impedance (Hi-Z)
NOTE 4: R(MR) connected at input of preamplifier. Noise due to R(MR) is not included.
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