參數(shù)資料
型號(hào)： TN0702
廠商： Supertex, Inc.
英文描述： N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 476K
代理商： TN0702
2
TN0702
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
0.53A
1.0A
125
170
0.53A
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
°
C
Gate Threshold Voltage
0.5
0.8
1.0
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.0
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
100
nA
100
μ
A
I
D(ON)
ON-State Drain Current
0.5
1.0
A
V
GS
= V
DS
= 5V
V
GS
= 2V, I
D
= 50mA
V
GS
= 3V, I
D
= 200mA
V
GS
= 5V, I
D
=500mA
V
GS
= 5V, I
D
= 500mA
V
DS
= 5V, I
D
= 500mA
4.0
5.0
R
DS(ON)
1.9
2.5
1.0
1.3
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwide stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.75
%/
°
C
100
500
m
Input Capacitance
130
200
Common Source Output Capacitance
70
125
pF
V
GS
= 0V, V
DS
= 20V, f =1MHz
Reverse Transfer Capacitance
30
60
Turn-ON Delay Time
20
Rise Time
20
ns
Turn-OFF Delay Time
30
Fall Time
20
Diode Forward Voltage Drop
1.0
V
V
GS
= 0V, I
SD
= 0.5A
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= 20V, I
D
= 0.5A,
R
GEN
= 25
Static Drain-to-Source
ON-State Resistance
相關(guān)PDF資料
PDF描述
TN0702N3 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2106 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2106 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V，低門(mén)限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
TN2106K1 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2106N3 N-Channel Enhancement-Mode Vertical DMOS FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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TN0702N3-G 功能描述:MOSFET 20V 1.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0702N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN0702N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN0702N3-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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