參數(shù)資料
型號： TN2124
廠商： Supertex, Inc.
英文描述： N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： N溝道增強型場效應管垂直的DMOS
文件頁數(shù)： 2/4頁
文件大小： 32K
代理商： TN2124
2
TN2124
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
200
θ
ja
°
C/W
350
I
DR
*
I
DRM
TO-236AB
134mA
250mA
134mA
250mA
TO-243AA
230mA
1.1A
1.6W
15
78
230mA
1.1A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board. 25mmx25mmx1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
240
V
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 3V, I
D
= 25mA
V
GS
= 4.5V, I
D
= 120mA
I
D
= 120mA, V
GS
= 4.5V
V
DS
= 25V, I
D
= 120mA
Gate Threshold Voltage
0.8
2.0
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-5.5
mV/
°
C
0.1
100
nA
Zero Gate Voltage Drain Current
1
μ
A
μ
A
100
I
D(ON)
R
DS(ON)
ON-State Drain Current
140
mA
30
15
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.7
1.0
%/
°
C
100
170
m
Input Capacitance
38
50
Common Source Output Capacitance
9
15
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Reverse Transfer Capacitance
3
5
Turn-ON Delay Time
4
7
Rise Time
2
5
Turn-OFF Delay Time
7
10
Fall Time
9
12
Diode Forward Voltage Drop
1.8
V
I
SD
= 120mA, V
GS
= 0V
I
SD
= 120mA, V
GS
= 0V
Reverse Recovery Time
400
ns
Notes:
1.All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= 25V
I
D
= 140mA
R
GEN
= 25
ns
Static Drain-to-Source
ON-State Resistance
相關PDF資料
PDF描述
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