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參數(shù)資料
| 型號： | TN2130ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 85 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 454K |
| 代理商： | TN2130ND |
2
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
300
V
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 120mA
V
GS
= 4.5V, I
D
= 120mA
V
DS
= 25V, I
D
= 100mA
Gate Threshold Voltage
0.8
2.4
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-5.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
100
μ
A
I
D(ON)
R
DS(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
250
mA
Static Drain-to-Source ON-State Resistance
25
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
250
m
Input Capacitance
50
Common Source Output Capacitance
15
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Reverse Transfer Capacitance
5
Turn-ON Delay Time
10
Rise Time
7
Turn-OFF Delay Time
12
Fall Time
15
Diode Forward Voltage Drop
1.8
V
I
SD
= 120mA, V
GS
= 0V
I
SD
= 120mA, V
GS
= 0V
Reverse Recovery Time
400
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-236AB
*
I
D
(continuous) is limited by max rated T
j
.
85mA
200mA
200
350
85mA
200mA
Thermal Characteristics
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Switching Waveforms and Test Circuit
V
DD
= 25V,
I
D
= 120mA
R
GEN
= 25
ns
TN2130
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