參數(shù)資料
型號(hào): TN2130ND
廠商: SUPERTEX INC
元件分類(lèi): 功率晶體管
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 85 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: DIE
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 454K
代理商: TN2130ND
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
V
G
T
j
(
°
C)
V
G
R
D
(
V
TH
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
D
BV
DSS
Variation with Temperature
B
D
T
j
(
°
C)
Transfer Characteristics
I
D
Capacitance vs. Drain-to-Source Voltage
50
C
I
D
(amperes)
0
10
20
30
40
25
0
0
2
4
6
8
10
-50
0
50
100
150
1.1
1.0
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
-50
0
50
100
150
28pF
V
DS
= 10V
80 pF
V
DS
= 40V
V
GS
= 4.5V
V
GS
= 10V
0
0.2
0.4
0.6
1.0
0.8
f = 1MHz
0.9
2.0
1.6
1.2
0.8
0.4
0
V
GS(th)
@ 1mA
R
DS(ON)
@ 4.5V, 120mA
0
1.0
0.8
0.6
0.4
0.2
0
T
A
= -55
°
C
V
DS
= 15V
V
DS
125
°
C
Q
G
(nanocoulombs)
V
DS
(volts)
V
GS
(volts)
C
ISS
C
OSS
C
RSS
25
°
C
Typical Performance Curves
TN2130
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