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參數(shù)資料
| 型號(hào)： | TN2510ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 478K |
| 代理商： | TN2510ND |
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.6W
θ
jc
°
C/W
θ
ja
°
C/W
78
I
DR
*
I
DRM
TO-243AA
0.73A
5.0A
15
0.73A
5.0A
*
I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
100
V
V
GS
= 0V, I
D
= 2mA
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3.0V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 750mA
V
GS
= 10V, I
D
= 750mA
V
GS
= 10V, I
D
= 750mA
V
DS
= 25V, I
D
= 1.0A
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
ON-State Drain Current
1.2
2.0
3.0
6.0
R
DS(ON)
15
1.5
2.0
1.0
1.5
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.75
%/
°
C
0.4
0.8
Input Capacitance
70
125
Common Source Output Capacitance
30
70
pF
Reverse Transfer Capacitance
15
25
Turn-ON Delay Time
10
Rise Time
10
Turn-OFF Delay Time
20
Fall Time
10
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1.5A
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
DD
= 25V,
I
D
= 1.5A,
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
TN2510
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