參數(shù)資料
型號： TN5325
廠商： Supertex, Inc.
英文描述： CONNECTOR ACCESSORY
中文描述： 連接器附件
文件頁數(shù)： 2/2頁
文件大小： 446K
代理商： TN5325
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
200
θ
ja
°
C/W
350
I
DR
*
I
DRM
TO-236AB
150mA
400mA
150mA
400mA
TO-92
215mA
800mA
0.74W
125
170
215mA
800mA
TO-243AA
*
I
D
(continuous) is limited by max rated T
j
.
**Mounted on FR5 board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
316mA
1.5A
1.6W**
15
78**
316mA
1.5A
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
250
V
I
D
= 100
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 100V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, I
D
= 150mA
V
DS
= 25V, I
D
= 200mA
Gate Threshold Voltage
0.6
2.0
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
1.0
10.0
1.0
μ
A
μ
A
mA
I
D(ON)
ON-State Drain Current
0.6
1.2
A
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
8.0
7.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.0
%/
°
C
150
m
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
110
60
23
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
20
15
25
25
Diode Forward Voltage Drop
1.8
V
I
SD
= 200mA, V
GS
= 0V
I
SD
= 200mA, V
GS
= 0V
Reverse Recovery Time
300
ns
1.All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
V
DD
= 25V
I
D
= 150mA
R
GEN
= 25
ns
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
GEPULSE
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
TN5325
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